The Basics of GaN Charger Technology | ZONSAN
History of semiconductor materials
1. The first generation of semiconductor materials
Si, Ge based elemental semiconductors, small and medium power microelectronic devices
2. Second generation semiconductor materials
GaAs, InP and other compound semiconductors, LED, LD and other optoelectronic devices
GaAs, InP and other compound semiconductors, LED, LD and other optoelectronic devices
3. Third generation semiconductor materials
GaN, SiC and other broadband semiconductors, high-power microelectronic, optoelectronic and microwave devices
2. High frequency characteristics, can reach 300GHz (silicon is 10G, GaAs is 80G)
3. High temperature characteristics, normal operation at 300°C (very suitable for aerospace, military and other high temperature environments)
4. High saturation speed of electron drift, small dielectric constant, good thermal conductivity
5. Acid, alkali and corrosion resistance (can be used in harsh environments)
6. High voltage characteristics (shock resistant, high reliability)
7. High power (high power devices)
2. RF components
3. GaN HEMT Chip, HEMT MMIC
4. Active phased radar
5. Broadband communication
6. Microwave power devices
GaN, SiC and other broadband semiconductors, high-power microelectronic, optoelectronic and microwave devices
Features of GaN
1. High forbidden band width, can cover red, yellow, green, blue, violet and ultraviolet spectral range2. High frequency characteristics, can reach 300GHz (silicon is 10G, GaAs is 80G)
3. High temperature characteristics, normal operation at 300°C (very suitable for aerospace, military and other high temperature environments)
4. High saturation speed of electron drift, small dielectric constant, good thermal conductivity
5. Acid, alkali and corrosion resistance (can be used in harsh environments)
6. High voltage characteristics (shock resistant, high reliability)
7. High power (high power devices)
GaN applications
1. Wall charger, desktop charger2. RF components
3. GaN HEMT Chip, HEMT MMIC
4. Active phased radar
5. Broadband communication
6. Microwave power devices