Rohm Develops New Technology for Controlling GaN Power Semiconductors

2023-03-25 Rohm Develops New Technology for Controlling GaN Power Semiconductors

Recently, official news from Rohm shows that it has developed a high-speed control IC for GaN semiconductors that can reduce the power package area by 86% and can reduce the time when switching current through the integrated circuit to 2 nanoseconds (only a quarter of the original), which is the fastest in the industry. The use of this control IC, GaN semiconductor can maximize the performance of high-speed switching better than the existing silicon (Si) semiconductor, etc., but also to achieve the miniaturization of the drive peripheral components.

Industry sources indicate that this technology is expected to be used in combination with GaN semiconductors, etc. manufactured by the company, for applications such as communication base stations, data centers (DCs), industrial machines, and flying robots (drones). Samples will be available from as early as 2023.